MJD210T4

MJD210T4概述

互补的塑料功率晶体管 Complementary Plastic Power Transistors

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS

MJD200 NPN

MJD210 PNP

NPN/PNP Silicon DPAK For Surface Mount Applications

Designed for low voltage, low−power, high−gain audio amplifier applications.

Features

•Collector−Emitter Sustaining Voltage − VCEOsus= 25 Vdc Min @ IC= 10 mAdc

•High DC Current Gain − hFE = 70 Min @ IC= 500 mAdc

                                                            =  45 Min @ IC= 2 Adc

                                                             = 10 Min @ IC= 5 Adc

•Lead Formed for Surface Mount Applications in Plastic Sleeves

No Suffix

•Low Collector−Emitter Saturation Voltage −VCEsat= 0.3 Vdc Max @ IC= 500 mAdc

                                                                    = 0.75 Vdc Max @ IC= 2.0 Adc

•High Current−Gain − Bandwidth Product −fT= 65 MHz Min @ IC= 100 mAdc

•Annular Construction for Low Leakage −ICBO= 100 nAdc @ Rated VCB

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V

•Pb−Free Packages are Available

MJD210T4数据文档
型号 品牌 下载
MJD210T4

ON Semiconductor 安森美

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MJD200T4G

ON Semiconductor 安森美

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MJD210T4G

ON Semiconductor 安森美

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MJD2955TF

Fairchild 飞兆/仙童

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MJD2955G

ON Semiconductor 安森美

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MJD29CTF

Fairchild 飞兆/仙童

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MJD253T4G

ON Semiconductor 安森美

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MJD2955T4G

ON Semiconductor 安森美

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MJD210G

ON Semiconductor 安森美

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MJD200G

ON Semiconductor 安森美

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MJD253-1G

ON Semiconductor 安森美

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