APT85GR120 系列 1200 V 85 A 962 W 490 nC NPT IGBT - TO-264
You can use this IGBT transistor from as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 962000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT85GR120L | Microsemi 美高森美 | 下载 |
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| APT8M100B | Microsemi 美高森美 | 下载 |
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| APT8065BVRG | Microsemi 美高森美 | 下载 |
| APT80GA60LD40 | Microsemi 美高森美 | 下载 |
| APT85GR120B2 | Microsemi 美高森美 | 下载 |