VISHAY SIS407DN-T1-GE3 晶体管, MOSFET, P沟道, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV
The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications.
型号 | 品牌 | 下载 |
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SIS407DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS412DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS413DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS427EDN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS406DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS407ADN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS410DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS436DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS456DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS434DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS454DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |