SMMBT3904LT3G

SMMBT3904LT3G概述

通用晶体管 General Purpose Transistor

- 双极 BJT - 单 NPN 40 V 200 mA 300MHz 300 mW 表面贴装型 SOT-23-3(TO-236)


得捷:
TRANS NPN 40V 0.2A SOT23-3


立创商城:
NPN 双极晶体管


贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Bipolar Transistor


艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, ON Semiconductor&s;s NPN SMMBT3904LT3G general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.


安富利:
Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R


Verical:
Trans GP BJT NPN 40V 0.2A 300mW Automotive 3-Pin SOT-23 T/R


SMMBT3904LT3G数据文档
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