RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Amplifying and switching electronic signals fast and reliably can be done with this RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 95000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD85035STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035-E | ST Microelectronics 意法半导体 | 下载 |
| PD85004 | ST Microelectronics 意法半导体 | 下载 |
| PD85006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD85006TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025-E | ST Microelectronics 意法半导体 | 下载 |