MUN2212T1G

NPN 晶体管，ON Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 数字晶体管，On Semiconductor配备电阻器的双极性晶体管也称为“数字晶体管”或“偏流电阻器的晶体管”，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。

双电阻器数字 NPN ，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor MUN2212T1G NPN 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 3引脚 SOT-346 SC-59封装

得捷:
TRANS PREBIAS NPN 50V 100MA SC59

立创商城:
MUN2212T1G

e络盟:
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

艾睿:
Compared to traditional BJ transistors, the NPN MUN2212T1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

Allied Electronics:
MUN2212T1G NPN Digital Transistor, 100 mA 50 V 22 kOhms, Ratio Of 1, 3-Pin SC-59

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R

TME:
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1:22kΩ

Verical:
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R

Newark:
# ON SEMICONDUCTOR  MUN2212T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 Ratio, SC-59

Win Source:
TRANS PREBIAS NPN 338MW SC59