NXP BSH201,215 晶体管, MOSFET, P沟道, -160 mA, -60 V, 2.1 ohm, -10 V, -1.9 V
The is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BSH201,215 | NXP 恩智浦 | 下载 |
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