单晶体管, IGBT, 160 A, 1.5 V, 833 W, 600 V, TO-247, 3 引脚
Summary of Features:
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Very low V CEsat 1.5V typ.
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Maximum junction temperature 175°C
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Short circuit withstand time 5µs
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Positive temperature coefficient in V CEsat
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Low EMI
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Low gate charge
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Green package
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Very soft, fast recovery anti-parallel Emitter Controlled HE diode