W29EE011-90

Flash Parallel 5V 1M-bit 128K x 8 90ns 32Pin PDIP

GENERAL DESCRIPTION

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption compared toother comparable 5-volt flash memory products. 

FEATURES

Single 5-volt program and erase operations  

Fast page-write operations 

  −128 bytes per page

  −Page program cycle: 10 mS max.

  −Effective byte-program cycle time: 39 µS

  −Optional software-protected data write

Fast chip-erase operation: 50 mS

Read access time: 90/150 nS

Page program/erase cycles: 1K/10K

Ten-year data retention

Software and hardware data protection

Low power consumption

  −Active current: 25 mA typ.

  −Standby current: 20 µA typ.

Automatic program timing with internal VPPgeneration

End of program detection

  −Toggle bit

  −Data polling

Latched address and data

TTL compatible I/O

JEDEC standard byte-wide pinouts

Available packages: 32-pin 600 mil DIP, 32-pin TSOP 8 x 20 mm, 32-pin STSOP 

8 x 14 mm, 32-pin PLCC, and Lead-free 32-pin PLCC