STGB6NC60HT4

STGB6NC60HT4概述

N沟道600V - 7A - D2PAK非常快的PowerMESH TM IGBT N-channel 600V - 7A - D2PAK Very fast PowerMESH TM IGBT

Use the IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

STGB6NC60HT4数据文档
型号 品牌 下载
STGB6NC60HT4

ST Microelectronics 意法半导体

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STGB10NB40LZT4

ST Microelectronics 意法半导体

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STGB10NC60KT4

ST Microelectronics 意法半导体

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STGB19NC60KT4

ST Microelectronics 意法半导体

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STGB30NC60WT4

ST Microelectronics 意法半导体

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STGB30NC60KT4

ST Microelectronics 意法半导体

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STGB20NB41LZT4

ST Microelectronics 意法半导体

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STGB40V60F

ST Microelectronics 意法半导体

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STGB19NC60WT4

ST Microelectronics 意法半导体

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STGB20V60DF

ST Microelectronics 意法半导体

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STGB20NB37LZT4

ST Microelectronics 意法半导体

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