BF511 N沟道结型场效应管 20v 2.5~7mA SOT-23 marking/标记 S7W 射频
最大源漏极电压VdsDrain-Source Voltage| 20v \---|--- 栅源极击穿电压VBRGSGate-Source Voltage| -20v 漏极电流Vgs=0VIDSSDrain Current| 2.5~7ma 关断电压VgsoffGate-Source Cut-off Voltage| 耗散功率PdPower Dissipation| 250mW/0.25W Description & Applications| •N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic the products are very suitable for applications such as the r.f. stages in f.m. portables BF510, car radios and mains radios BF512 or the mixer stage BF513. 描述与应用| •N沟道硅场效应晶体管 说明 非对称N沟道平面 外延结型场效应 微型塑料晶体管 的产品,非常适合 射频应用,如阶段 F.M.笔记本电脑(BF510),汽车收音机 (BF511)和电源收音机(BF512) 混频级(BF513)。