N沟道900V - 2.1ohm - 5.2A TO- 247齐纳保护PowerMESH⑩III MOSFET N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.
■ TYPICAL RDSon = 2.1Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
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