INFINEON BSV236SPH6327XTSA1 场效应管, MOSFET, P沟道, -20V, -1.5A, SOT-363-6
OptiMOS™P P 通道功率 MOSFET
**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能,以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括:直流-直流、电动机控制、汽车和 eMobility。
增强型模式
雪崩等级
低切换和传导功率损耗
无铅引线电镀;符合 RoHS 标准
标准封装
OptiMOS™ P 通道系列:温度范围为 -55°C 至 +175°C
欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSV236SPH6327XTSA1, 1.5 A, Vds=20 V, 6引脚 SOT-363 SC-88封装
得捷:
MOSFET P-CH 20V 1.5A SOT363-6
立创商城:
P沟道 20V 1.5A
贸泽:
MOSFET SMALL SIGNAL+P-CH
e络盟:
晶体管, MOSFET, BRT, P沟道, -1.5 A, -20 V, 0.131 ohm, -4.5 V, -900 mV
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSV236SPH6327XTSA1 power MOSFET can provide a solution. Its maximum power dissipation is 560 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH 20V 1.5A 6-Pin SOT-363 T/R
Chip1Stop:
Trans MOSFET P-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R
TME:
Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Verical:
Trans MOSFET P-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R
Newark:
# INFINEON BSV236SPH6327XTSA1 MOSFET, P CH, -20V, -1.5A, SOT-363-6
Win Source:
MOSFET P-CH 20V 1.5A SOT363
型号 | 品牌 | 下载 |
---|---|---|
BSV236SPH6327XTSA1 | Infineon 英飞凌 | 下载 |
BSV236SP H6327 | Infineon 英飞凌 | 下载 |
BSV236SP | Infineon 英飞凌 | 下载 |
BSV236SPH6327XT | Infineon 英飞凌 | 下载 |
BSV236SP L6327 | Infineon 英飞凌 | 下载 |