BS170_D27Z

FAIRCHILD SEMICONDUCTOR  BS170_D27Z  晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

The is a N-channel enhancement-mode FET produced using "s proprietary high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.

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High density cell design for low RDS ON

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Voltage controlled small signal switch

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Rugged and reliable

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High saturation current capability