FDC638APZ

FDC638APZ概述

FAIRCHILD SEMICONDUCTOR  FDC638APZ.  场效应管, MOSFET, P沟道, -20V, 4.5A, SSOT-6

The is a 2.5V specified P-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.

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High performance Trench technology for extremely low RDS ON
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8nC Typical low gate charge
FDC638APZ数据文档
型号 品牌 下载
FDC638APZ

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