IXTY08N100D2

IXTY08N100D2概述

TO-252AA N-CH 1000V 0.8A

表面贴装型 N 通道 1000 V 800mA(Tc) 60W(Tc) TO-252AA


得捷:
MOSFET N-CH 1000V 800MA TO252


贸泽:
MOSFET 8mAmps 1000V


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXTY08N100D2 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 60000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET N-CH 1KV 0.8A 3-Pin2+Tab TO-252AA


DeviceMart:
MOSFET N-CH 1000V 800MA DPAK


IXTY08N100D2数据文档
型号 品牌 下载
IXTY08N100D2

IXYS Semiconductor

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IXTY12N06T

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IXTY64N055T

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IXTY50N085T

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IXTY55N075T

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IXTY2N80P

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IXTY3N50P

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IXTY4N65X2

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IXTY1R6N50P

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IXTY2N100P

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IXTY2R4N50P

IXYS Semiconductor

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