RAM/K4T1G164QF-BCE6 托盘
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/ sec/pin DDR2-800 for general applications.
The chip is designed to comply with the following key DDR2 SDRAM fea tures such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip DriverOCD impedance adjustment and On Die Termination.
Win Source:
1Gb F-die DDR2 SDRAM
| 型号 | 品牌 | 下载 |
|---|---|---|
| K4T1G164QF-BCE6 | Samsung 三星 | 下载 |
| K4T1G164QE-HCE6 | Samsung 三星 | 下载 |
| K4T1G164QF-BCE7 | Samsung 三星 | 下载 |
| K4T1G164QF-BCF7 | Samsung 三星 | 下载 |
| K4T1G164QQ-HCE6 | Samsung 三星 | 下载 |
| K4T1G164QE-HCE7 | Samsung 三星 | 下载 |
| K4T1G164QE-HCF7 | Samsung 三星 | 下载 |
| K4T1G084QF-BCF7 | Samsung 三星 | 下载 |
| K4T1G084QF-BCE7 | Samsung 三星 | 下载 |
| K4T1G164QQ-HCE7 | Samsung 三星 | 下载 |
| K4T1G084QE-HCE6 | Samsung 三星 | 下载 |