BSL802SNH6327XTSA1

晶体管, MOSFET, N沟道, 7.5 A, 20 V, 0.018 ohm, 2.5 V, 550 mV

Summary of Features:

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Enhancement mode

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Avalanche rated

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Pb-free lead plating; RoHS compliant

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Qualified according to AEC Q101

得捷:
MOSFET N-CH 20V 7.5A TSOP-6

贸泽:
MOSFET SMALL SIGNALN-CH

e络盟:
晶体管, MOSFET, N沟道, 7.5 A, 20 V, 0.018 ohm, 2.5 V, 550 mV

艾睿:
Compared to traditional transistors, BSL802SNH6327XTSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 20V 7.5A 6-Pin TSOP T/R

Chip1Stop:
OPTIMOS 2 SMALL-SIGNAL-TRANSISTOR

TME:
Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6

Win Source:
MOSFET N-CH 20V 7.5A 6TSOP