FM24CL16B 系列 16 Kb 串行 5 V F-RAM 存储器 - SOIC-8
Description
The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Features
16K bit Ferroelectric Nonvolatile RAM
• Organized as 2,048 x 8 bits
• High Endurance 1014 Read/Writes
• 38 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
• Up to 1MHz Maximum Bus Frequency
• Direct Hardware Replacement for EEPROM
• Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
• 2.7 - 3.65V Operation
• 100 A Active Current 100 kHz
• 3 A typ. Standby Current
Industry Standard Configuration
• Industrial Temperature -40 C to +85 C
• 8-pin “Green”/RoHS SOIC and TDFN Packages
型号 | 品牌 | 下载 |
---|---|---|
FM24CL16B-GTR | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24V01A-GTR | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24V02A-GTR | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24CL04B-G | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24W256-G | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24CL16B-G | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24CL64B-GA | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24CL64B-G | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24V05-G | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24VN10-G | Cypress Semiconductor 赛普拉斯 | 下载 |
FM24V10-G | Cypress Semiconductor 赛普拉斯 | 下载 |