Trans IGBT Chip N-CH 1700V 12A 75000mW 3Pin2+Tab TO-268
This IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 75000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
立创商城:
IXBT6N170
得捷:
IGBT 1700V 12A 75W TO268
贸泽:
IGBT Transistors 12 Amps 1700V 3.6 Rds
艾睿:
Trans IGBT Chip N-CH 1700V 12A 75000mW 3-Pin2+Tab TO-268
Verical:
Trans IGBT Chip N-CH 1700V 12A 75000mW 3-Pin2+Tab TO-268
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|---|---|---|
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