IS42VM16160D-8BL

IS42VM16160D-8BL概述

256M, 1.8V, Mobile SDRAM, 16Mx16, 125MHz, 54 Ball BGA 8mmx13mm

SDRAM - 移动 存储器 IC 256Mb(16M x 16) 并联 54-TFBGA(8x13)


得捷:
IC DRAM 256MBIT PARALLEL 54TFBGA


艾睿:
DRAM Chip Mobile SDRAM 256Mbit 16Mx16 1.8V 54-Pin TFBGA


安富利:
The 256Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 1.8V Vdd/ Vddq memory systems containing 268,435,456 bits. Internally configured as a quad-bank DRAM with a synchronous interface. The 256Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVCMOS Vdd = 1.8V compatible. The 256Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access.A self-timed row precharge initiated at the end of the burst sequence is available with the AUTO PRECHARGE function enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an Active command begins accesses, followed by a Read or Write command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed BA0, BA1 select the bank; A0-A12 x8 and x16 and A0-A11 x32 select the row. The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations, or full page, with a burst terminate option.


Chip1Stop:
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin TFBGA


Verical:
DRAM Chip Mobile SDRAM 256Mbit 16Mx16 1.8V 54-Pin TFBGA


IS42VM16160D-8BL数据文档
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