MRF8S21100HSR3

RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793

Overview

The MRF8S21100HR3 and are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

2110 MHz| 17.9| 33.0| 6.4| –38.7

2140 MHz| 18.1| 33.0| 6.4| –38.2

2170 MHz| 18.3| 33.4| 6.3| –37.2

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW Output Power 3 dB Input Overdrive from Rated Pout

* Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW