FAIRCHILD SEMICONDUCTOR FDD6680A 场效应管, MOSFET, N通道, 30V, 56A
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDSONin a small package.
Features
• 56 A, 30 V RDSON= 9.5 mΩ@ VGS= 10 V
RDSON= 13 mΩ@ VGS= 4.5 V
• Low gate charge 23nC typ.
• Fast Switching
• High performance trench technology for extremely low RDSON
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|---|---|---|
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