OMNIFET II完全autoprotected功率MOSFET OMNIFET II fully autoprotected Power MOSFET
Description
The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power MOSFET analog driving
■ Compatible with standard Power MOSFET
| 型号 | 品牌 | 下载 |
|---|---|---|
| VND14NV04-1-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04TR-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04 | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04-1-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04-1 | ST Microelectronics 意法半导体 | 下载 |
| VND10N06-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV0413TR | ST Microelectronics 意法半导体 | 下载 |
| VND10N06-1-E | ST Microelectronics 意法半导体 | 下载 |
| VND10N06TR-E | ST Microelectronics 意法半导体 | 下载 |
| VND10N0613TR | ST Microelectronics 意法半导体 | 下载 |