A2T20H160W04NR3

RF Power Transistor,1880 to 2025MHz, 90W, Typ Gain in dB is 17 @ 1960MHz, 28V, LDMOS, SOT1818

Overview

The 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 MHz.

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## Features

* Advanced high performance in-package Doherty

* Designed for wide instantaneous bandwidth applications

* Greater negative gate-source voltage range for improved Class C operation

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for digital predistortion error correction systems

* RoHS compliant

## Features RF Performance Table

### 1880-2025 MHz

Typical Doherty single-carrier W-CDMA performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.2 Vdc, Pout = 28 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1880 MHz| 16.8| 45.8| 8.3| –32.5

1960 MHz| 17.0| 47.7| 8.2| –33.5

2025 MHz| 16.5| 47.9| 8.0| –34.3