PBSS4160U,115

NXP  PBSS4160U,115  单晶体管 双极, NPN, 60 V, 220 MHz, 250 mW, 1 A, 500 hFE

The is a 1A NPN breakthrough-in small signal BISS Transistor housed in a surface-mount plastic package.

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Low collector-emitter saturation voltage VCEsat

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High collector current capability of IC and ICM

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High collector current gain hFE at high IC

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High efficiency due to less heat generation

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Smaller required printed-circuit board PCB area than for conventional transistors

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PNP complement is PBSS5160U

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52 Marking code