BCW33LT1G

ON SEMICONDUCTOR  BCW33LT1G  单晶体管 双极, NPN, 32 V, 300 mW, 100 mA, 420 hFE

小信号 NPN ，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

得捷:
TRANS NPN 32V 100MA SOT23-3

立创商城:
BCW33LT1G

欧时:
### 双极性晶体管，On SemiconductorON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管

贸泽:
双极晶体管 - 双极结型晶体管BJT 100mA 32V NPN

e络盟:
单晶体管 双极, NPN, 32 V, 300 mW, 100 mA, 420 hFE

艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN BCW33LT1G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
ON Semi BCW33LT1G NPN Bipolar Transistor, 0.1 A, 32 V, 3-Pin SOT-23

安富利:
Trans GP BJT NPN 32V 0.1A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT NPN 32V 0.1A Automotive 3-Pin SOT-23 T/R

TME:
Transistor: NPN; bipolar; 32V; 0.1A; 300mW; SOT23

Verical:
Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R

DeviceMart:
TRANS NPN GP 32V 100MA SOT-23

Win Source:
TRANS NPN 32V 0.1A SOT-23