功率半导体功率模块 Power Semiconductors Power Modules
This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 781000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT50GF120LRG | Microsemi 美高森美 | 下载 |
| APT50GT120JRDQ2 | Microsemi 美高森美 | 下载 |
| APT5F100K | Microsemi 美高森美 | 下载 |
| APT50GN60BG | Microsemi 美高森美 | 下载 |
| APT50GT60BRG | Microsemi 美高森美 | 下载 |
| APT50GT60BRDQ2G | Microsemi 美高森美 | 下载 |
| APT54GA60B | Microsemi 美高森美 | 下载 |
| APT50GS60BRG | Microsemi 美高森美 | 下载 |
| APT54GA60BD30 | Microsemi 美高森美 | 下载 |
| APT53N60BC6 | Microsemi 美高森美 | 下载 |
| APT5024BLLG | Microsemi 美高森美 | 下载 |