BFP640FESDH6327XTSA1

晶体管 双极-射频, NPN, 4.1 V, 46 GHz, 200 mW, 50 mA, 110 hFE

Description:

The BFP640FESD is a Silicon Germanium Carbon SiGe:C NPN Heterojunction wideband Bipolar RF Transistor HBT in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

Summary of Features:

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Robust high performance low noise amplifier based on ´s reliable, high volume SiGe:C wafer technology

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2 kV ESD robustness HBM due to integrated protection circuits

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High maximum RF input power of 21 dBm

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0.6 dB minimum noise figure typical at 1.5 GHz, 0.65 dB at 2.4 GHz, 6 mA

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28.5 dB maximum gain Gms typical at 1.5 GHz, 25 dB at 2.4 GHz, 30 mA

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26 dBm OIP3 typical at 2.4 GHz, 30 mA

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Accurate SPICE GP model available to enable effective design in process see chapter 6

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Thin, small, flat, Pb- and halogen free RoHS compliant package with visible leads