BSH205

NXP  BSH205  晶体管, MOSFET, P沟道, -0.75 A, -12 V, 400 mohm, -4.5 V, 680 mV

最大源漏极电压VdsDrain-Source Voltage| -12V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| -0.75A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.18Ω @-430mA,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4V 耗散功率PdPower Dissipation| 417mW/0.417W Description & Applications| • Low threshold voltage VDS = -30 V • Fast switching • Logic level compatible ID = -0.52 A • Subminiature surface mountpackage 描述与应用| •低阈值电压VDS=-30 V •快速开关 •逻辑电平兼容ID=-0.52 •表面mountpackage微型

e络盟:
NXP  BSH205  晶体管, MOSFET, P沟道, -0.75 A, -12 V, 400 mohm, -4.5 V, 680 mV

Win Source:
P-channel enhancement mode MOS transistor