PUMH10,115数据手册PDF_PUMH10,115中文资料-锐单商城

PUMH10,115概述

NXP PUMH10,115 晶体管双极预偏置/数字, BRT, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率, SOT-363

The is a dual NPN Resistor Equipped Transistor RET housed in surface-mount plastic package. It offers built-in bias resistors and simplified circuit design. It is designed for use with low current peripheral driver, control of IC inputs and replaces general-purpose transistors in digital applications.