MSD601-RT1G

MSD601-R: NPN 双极晶体管

Trans GP BJT NPN 50V 0.1A Automotive 3-Pin SC-59 T/R

得捷:
TRANS NPN 50V 0.1A SC59

立创商城:
MSD601-RT1G

艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MSD601-RT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.

安富利:
Trans GP BJT NPN 50V 0.1A 3-Pin SC-59 T/R

Verical:
Trans GP BJT NPN 50V 0.1A Automotive 3-Pin SC-59 T/R

Online Components:
Trans GP BJT NPN 50V 0.1A Automotive 3-Pin SC-59 T/R