RF功率MOSFET N沟道增强模式 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
The is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
• Specified 250 Volt, 27.12 MHz Characteristics:
• Output Power = 750 Watts.
• Gain = 17dB Class C
• Efficiency > 75%
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.