NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 25000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JANTX2N3767 | Microsemi 美高森美 | 下载 |
| JANTX2N2905A | Microsemi 美高森美 | 下载 |
| JANTX2N2907AUA | Microsemi 美高森美 | 下载 |
| JANTX2N2920 | Microsemi 美高森美 | 下载 |
| JANTX1N5305-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019 | Microsemi 美高森美 | 下载 |
| JANTX1N5310-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019S | Microsemi 美高森美 | 下载 |
| JANTX1N5314-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |