NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
Bipolar BJT Transistor NPN 75V 7A 35W Through Hole
贸泽:
Bipolar Transistors - BJT Power BJT
艾睿:
This specially engineered NPN JANTX2N3879 GP BJT from Microsemi comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 35000 mW. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JANTX2N3879 | Microsemi 美高森美 | 下载 |
| JANTX2N2905A | Microsemi 美高森美 | 下载 |
| JANTX2N2907AUA | Microsemi 美高森美 | 下载 |
| JANTX2N2920 | Microsemi 美高森美 | 下载 |
| JANTX1N5305-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019 | Microsemi 美高森美 | 下载 |
| JANTX1N5310-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019S | Microsemi 美高森美 | 下载 |
| JANTX1N5314-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |