Trans MOSFET N-CH Si 30V 61A 3Pin3+Tab TO-220FP
VDSS = 30V R
DSon = 0.007Ω
ID = 61A
**Description**
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Logic-Level Gate Drive
Advanced Process Technology
solated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
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