BUK583-60A

BUK583-60A N沟道MOSFET 20V 3A SOT-223/SC-73/TO261-4 marking/标记 53-60A 密度电池设计极低的RDS

20V, 3.0A, RDSON= 72mW @VGS = 4.5V. RDSON= 110mW @VGS = 2.5V. High dense cell design for extremely low RDSON Rugged and reliable. SOT-23 package.

Win Source:
PowerMOS transistor Logic level FET