Trans IGBT Chip N-CH 600V 100A 543000mW 3Pin3+Tab TO-247
This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 543000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
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