IPP50R299CPXKSA1

晶体管, MOSFET, N沟道, 12 A, 500 V, 0.27 ohm, 10 V, 3 V

Summary of Features:

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Lowest figure of merit R on x Q g

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Ultra low gate charge

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Extreme dv/dt rate

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Ultra low R DSon, ultra low gate charge, very fast switching

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V th 3 V, g fs very high, internal R g very low

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High current capability

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Significant reduction of conduction and switching losses

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High power density and efficiency for superior power conversion systems

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Best-in-class price/performance ratio

Target Applications:

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Solar

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Server

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Telecom

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Consumer

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Adapter

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PC power