MJH11020数据手册PDF_MJH11020中文资料-锐单商城

MJH11020概述

达林顿互补硅功率晶体管 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Darlington Silicon Power Transistors

These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

Features

• High DC Current Gain @ 10 Adc — hFE = 400 Min All Types

• Collector−Emitter Sustaining Voltage

VCEOsus = 150 Vdc Min — MJH11018, 17

= 200 Vdc Min — , 19

= 250 Vdc Min — MJH11022, 21

• Low Collector−Emitter Saturation Voltage

VCEsat = 1.2 V Typ @ IC = 5.0 A

= 1.8 V Typ @ IC = 10 A

• Monolithic Construction

• Pb−Free Packages are Available

MJH11020数据文档