BC637RL1G

高电流晶体管 High Current Transistors

- 双极 BJT - 单 NPN 60 V 1 A 200MHz 625 mW 通孔 TO-92（TO-226）

得捷:
TRANS NPN 60V 1A TO92

贸泽:
Bipolar Transistors - BJT SS T092 HC XSTR NPN 60V

艾睿:
The versatility of this NPN BC637RL1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans GP BJT NPN 60V 1A Automotive 3-Pin TO-92 T/R

Verical:
Trans GP BJT NPN 60V 1A 625mW Automotive 3-Pin TO-92 T/R

罗切斯特:
Trans GP BJT NPN 60V 1A Automotive 3-Pin TO-92 T/R