CPH3140-TL-E

双极晶体管 - 双极结型晶体管BJT BIP PNP 1A 100V

Bipolar BJT Transistor PNP 100V 1A 120MHz 900mW Surface Mount 3-CPH

得捷:
TRANS PNP 100V 1A 3CPH

立创商城:
CPH3140-TL-E

贸泽:
双极晶体管 - 双极结型晶体管BJT BIP PNP 1A 100V

艾睿:
ON Semiconductor has the solution to your circuit&s;s high-voltage requirements with their PNP CPH3140-TL-E general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 900 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT PNP 100V 1A 3-Pin CPH T/R

Chip1Stop:
Trans GP BJT PNP 100V 1A 3-Pin CPH T/R

Verical:
Trans GP BJT PNP 100V 1A 900mW 3-Pin CPH T/R

Win Source:
TRANS PNP 100V 1A CPH3