SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 12ns 44Pin TSOP-II
DESCRIPTION
The ISSIIS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mAtyp. CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperatures available
• Lead-free available
| 型号 | 品牌 | 下载 |
|---|---|---|
| IS64LV51216-12TLA3 | Integrated Silicon SolutionISSI | 下载 |
| IS64WV6416BLL-15BA3-TR | Integrated Silicon SolutionISSI | 下载 |
| IS64WV6416EEBLL-10CTLA3-TR | Integrated Silicon SolutionISSI | 下载 |
| IS64WV6416BLL-15BA3 | Integrated Silicon SolutionISSI | 下载 |
| IS64WV6416BLL-15TA3-TR | Integrated Silicon SolutionISSI | 下载 |
| IS64WV12816DBLL-12CTLA3-TR | Integrated Silicon SolutionISSI | 下载 |
| IS64WV6416BLL-15TA3 | Integrated Silicon SolutionISSI | 下载 |
| IS64WV5128EDBLL-10CTLA3-TR | Integrated Silicon SolutionISSI | 下载 |
| IS64WV25616EDBLL-10BLA3-TR | Integrated Silicon SolutionISSI | 下载 |
| IS64LV25616AL-12TA3-TR | Integrated Silicon SolutionISSI | 下载 |
| IS64WV10248EDBLL-10CTLA3-TR | Integrated Silicon SolutionISSI | 下载 |