IGD01N120H2BUMA1

Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3Pin2+Tab DPAK T/R

Summary of Features:

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Loss reduction in resonant circuits

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Temperature stable behavior

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Parallel switching capability

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Tight parameter distribution

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E off optimized for IC =1A

Target Applications:

 

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SMPS