功率半导体功率模块 Power Semiconductors Power Modules
This fast-switching IGBT transistor from will be perfect in your circuit. Its maximum power dissipation is 272000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT25GN120B2DQ2G | Microsemi 美高森美 | 下载 |
| APT20GF120BRDQ1G | Microsemi 美高森美 | 下载 |
| APT200GN60JDQ4G | Microsemi 美高森美 | 下载 |
| APT200GN60JG | Microsemi 美高森美 | 下载 |
| APT20GN60BG | Microsemi 美高森美 | 下载 |
| APT20GN60BDQ1G | Microsemi 美高森美 | 下载 |
| APT20F50S | Microsemi 美高森美 | 下载 |
| APT24F50B | Microsemi 美高森美 | 下载 |
| APT20GT60BRG | Microsemi 美高森美 | 下载 |
| APT25GR120B | Microsemi 美高森美 | 下载 |
| APT23F60B | Microsemi 美高森美 | 下载 |