MJD3055T4

STMICROELECTRONICS  MJD3055T4  单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE

NPN 功率，STMicroelectronics

### 双极晶体管，STMicroelectronics

STMicroelectronics 的各种 NPN 和 PNP ，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。

得捷:
TRANS NPN 60V 10A DPAK

欧时:
### NPN 功率晶体管，STMicroelectronics### 双极晶体管，STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。

贸泽:
Bipolar Transistors - BJT NPN Gen Pur Switch

艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN MJD3055T4 BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 60V 10A 3-Pin2+Tab DPAK T/R

富昌:
MJD3055 系列 NPN 60 V 10 A 表面贴装 互补 功率晶体管 - TO-252

Chip1Stop:
Trans GP BJT NPN 60V 10A 3-Pin2+Tab DPAK T/R

Verical:
Trans GP BJT NPN 60V 10A 20000mW 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  MJD3055T4  Bipolar BJT Single Transistor, NPN, 60 V, 20 W, 10 A, 5

Win Source:
TRANS NPN 60V 10A DPAK