BSP62H6327XTSA1

Infineon BSP62H6327XTSA1 PNP 达林顿晶体管对, 1 A, Vce=80 V, HFE=1000, 3 + Tab引脚 SOT-223封装

复合，

得捷:
TRANS PNP DARL 80V 1A SOT223-4

欧时:
Infineon BSP62H6327XTSA1 PNP 达林顿晶体管对, 1 A, Vce=80 V, HFE=1000, 3 + Tab引脚 SOT-223封装

贸泽:
Darlington Transistors AF TRANSISTORS

艾睿:
This PNP BSP62H6327XTSA1 Darlington transistor from Infineon Technologies amplifies your current and yields a much higher current gain than other transistors. This product&s;s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.55mA@500mA|1.8@1mA@1A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA|2.2@1mA@1A V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

安富利:
Trans Darlington PNP 80V 2A 4-Pin SOT-223 T/R

Win Source:
TRANS PNP DARL 80V 1A SOT223