BC337-040G

BC337-040G概述

放大器晶体管 Amplifier Transistors

Bipolar BJT Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92-3


得捷:
TRANS NPN 45V 0.8A TO92


贸泽:
双极晶体管 - 双极结型晶体管BJT 800mA 50V NPN


艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN BC337-040G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.


Verical:
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 Box


罗切斯特:
Trans GP BJT NPN 45V 0.8A 3-Pin TO-92 Box


BC337-040G数据文档
型号 品牌 下载
BC337-040G

ON Semiconductor 安森美

下载
BC337-25 A1

Taiwan Semiconductor 台湾半导体

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BC337-40 A1

Taiwan Semiconductor 台湾半导体

下载
BC33725TA

Fairchild 飞兆/仙童

下载
BC337-25BK

Diotec Semiconductor

下载
BC337-40BK

Diotec Semiconductor

下载
BC337-16BK

Diotec Semiconductor

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BC33725TF

Fairchild 飞兆/仙童

下载
BC33716BU

Fairchild 飞兆/仙童

下载
BC337-25-AP

Micro Commercial Components 美微科

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BC337-16-AP

Micro Commercial Components 美微科

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