2N6111

2N6111概述

STMICROELECTRONICS  2N6111  单晶体管 双极, 通用, PNP, -30 V, 4 MHz, 40 W, 7 A, 30 hFE

- 双极 BJT - 单 PNP 30 V 7 A 4MHz 40 W 通孔 TO-220AB


得捷:
TRANS PNP 30V 7A TO220


艾睿:
This specially engineered PNP 2N6111 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.


富昌:
2N6111 系列 40 V 7 A 通孔 硅PNP开关晶体管 - TO-220-3


Verical:
Trans GP BJT PNP 30V 7A 3-Pin3+Tab TO-220 Tube


Newark:
Bipolar BJT Single Transistor, General Purpose, PNP, -30 V, 4 MHz, 40 W, 7 A, 30 hFE


2N6111数据文档
型号 品牌 下载
2N6111

ST Microelectronics 意法半导体

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2N6109G

ON Semiconductor 安森美

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2N6107G

ON Semiconductor 安森美

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2N6111G

ON Semiconductor 安森美

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2N6123

Central Semiconductor

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2N6193

Microsemi 美高森美

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2N6107

ON Semiconductor 安森美

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2N6124

Multicomp

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2N6125

Central Semiconductor

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2N6109

ON Semiconductor 安森美

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2N6109

Continental Device

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