FAIRCHILD SEMICONDUCTOR FDB2614 晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
| 型号 | 品牌 | 下载 |
|---|---|---|
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